HGK026N15S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGK026N15S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 833 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 1431 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de HGK026N15S MOSFET
HGK026N15S Datasheet (PDF)
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Otros transistores... HGI120N10A , HGD120N10A , HGI120N10AL , HGD120N10AL , HGI130N12SL , HGD130N12SL , HGI200N10SL , HGD200N10SL , 4435 , HGK030N06S , HGM046NE6A , HGM046NE6AL , HGM059N08AL , HGM079N06SL , HGM090NE6A , HGM090NE6AL , HGM095NE4SL .
History: PE506BA | APM2309AC | STU70N2LH5 | CHM5506JGP | BLS70R420-B | PMCXB900UE | RSS090P03FU6TB
History: PE506BA | APM2309AC | STU70N2LH5 | CHM5506JGP | BLS70R420-B | PMCXB900UE | RSS090P03FU6TB



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