All MOSFET. HGK026N15S Datasheet

 

HGK026N15S Datasheet and Replacement


   Type Designator: HGK026N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 833 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 1431 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO-247
 

 HGK026N15S substitution

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HGK026N15S Datasheet (PDF)

 ..1. Size:935K  cn hunteck
 hgk026n15s.pdf pdf_icon

HGK026N15S

HGK026N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching2.35RDS(on),typ mW Enhanced Body diode dv/dt capability366 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switch

 9.1. Size:861K  cn hunteck
 hgb021n08s hgk023n08s hgp024n08s.pdf pdf_icon

HGK026N15S

,HGB021N08S HGK023N08S P-1HGP024N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.92RDS(on),typ m Enhanced Avalanche RuggednessTO-220 2.00RDS(on),typ m 100% UIS Tested, 100% Rg Tested290 AID (Sillicon Limited) Lead Free205 AID (Package Limited)

 9.2. Size:1129K  cn hunteck
 hgb020ne4s hgk020ne4s hgp020ne4s.pdf pdf_icon

HGK026N15S

, P-1HGB020NE4S HGK020NE4SHGP020NE4S45V N-Ch Power MOSFETFeature45 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.75RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 1.75RDS(on),typ mW 100% UIS Tested, 100% Rg Tested288 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Appli

 9.3. Size:870K  cn hunteck
 hgb025n06s hgk025n06s hgp025n06s.pdf pdf_icon

HGK026N15S

,HGB025N06S HGK025N06S P-1HGP025N06S60V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-263 1.6RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.8RDS(on),typ m Enhanced Avalanche RuggednessTO-220 1.9RDS(on),typ m 100% UIS Tested, 100% Rg Tested230 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap

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Datasheet: HGI120N10A , HGD120N10A , HGI120N10AL , HGD120N10AL , HGI130N12SL , HGD130N12SL , HGI200N10SL , HGD200N10SL , 4435 , HGK030N06S , HGM046NE6A , HGM046NE6AL , HGM059N08AL , HGM079N06SL , HGM090NE6A , HGM090NE6AL , HGM095NE4SL .

History: DMN6017SK3 | BSC040N08NS5 | OSG60R200PSZF | SVGP069R5NSA | FTK1016 | HAT1127H | HM2302BJR

Keywords - HGK026N15S MOSFET datasheet

 HGK026N15S cross reference
 HGK026N15S equivalent finder
 HGK026N15S lookup
 HGK026N15S substitution
 HGK026N15S replacement

 

 
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