HGK026N15S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGK026N15S
Marking Code: GK026N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 833 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 138 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 1431 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: TO-247
HGK026N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGK026N15S Datasheet (PDF)
hgk026n15s.pdf
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