HGN027N06S Todos los transistores

 

HGN027N06S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN027N06S
   Código: GN027N06S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 114 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 64 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 1540 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
   Paquete / Cubierta: DFN5X6
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HGN027N06S Datasheet (PDF)

 ..1. Size:763K  cn hunteck
 hgn027n06s.pdf pdf_icon

HGN027N06S

HGN027N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching2.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability152 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

 9.1. Size:901K  cn hunteck
 hgn023ne6a.pdf pdf_icon

HGN027N06S

HGN023NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.2RDS(on),typ mW Enhanced Body diode dv/dt capability162 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hi

 9.2. Size:905K  cn hunteck
 hgn028ne6a.pdf pdf_icon

HGN027N06S

HGN028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.4RDS(on),typ mW Enhanced Body diode dv/dt capability130 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hi

 9.3. Size:772K  cn hunteck
 hgn021n06sl.pdf pdf_icon

HGN027N06S

HGN021N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level1.7RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.3RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness172 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested85 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PHT8N06LT | IXFR24N50Q | AONS32310 | GM8205D | AP040N03G | SML1004RAN | WFP50N06

 

 
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