HGN027N06S Datasheet. Specs and Replacement

Type Designator: HGN027N06S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 114 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 1540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: DFN5X6

HGN027N06S substitution

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HGN027N06S datasheet

 ..1. Size:763K  cn hunteck
 hgn027n06s.pdf pdf_icon

HGN027N06S

HGN027N06S P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching 2.2 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 152 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch... See More ⇒

 9.1. Size:901K  cn hunteck
 hgn023ne6a.pdf pdf_icon

HGN027N06S

HGN023NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.2 RDS(on),typ mW Enhanced Body diode dv/dt capability 162 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hi... See More ⇒

 9.2. Size:905K  cn hunteck
 hgn028ne6a.pdf pdf_icon

HGN027N06S

HGN028NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.4 RDS(on),typ mW Enhanced Body diode dv/dt capability 130 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hi... See More ⇒

 9.3. Size:772K  cn hunteck
 hgn021n06sl.pdf pdf_icon

HGN027N06S

HGN021N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 1.7 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 2.3 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 172 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 85 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous... See More ⇒

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Detailed specifications: HGM290N10SL, HGN012N03AL, HGN016N04BL, HGN021N06SL, HGN022NE4SL, HGN023NE6A, HGN023NE6AL, HGN024N06SL, IRF2807, HGN028N08A, HGN028NE6A, HGN028NE6AL, HGN029NE4SL, HGN032NE4S, HGN035N08A, HGN035N08AL, HGN035N10A

Keywords - HGN027N06S MOSFET specs

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