HGN032NE4S Datasheet. Equivalente

 ..1. Size:895K  cn hunteck
 hgn032ne4s.pdf

P-1 HGN032NE4S 45V N-Ch Power MOSFET Feature 45 V VDS Optimized for high speed switching 2.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 140 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard

 9.1. Size:955K  cn hunteck
 hgn035n10a.pdf

P-1 HGN035N10A 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 3.1 RDS(on),typ mW Enhanced Avalanche Ruggedness 144 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Ci

 9.2. Size:765K  cn hunteck
 hgn036n08a.pdf

HGN036N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 3.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 138 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch

 9.3. Size:916K  cn hunteck
 hgn035n08al.pdf

HGN035N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic Level 3 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 4.2 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 118 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Recti

 9.4. Size:771K  cn hunteck
 hgn036n08al.pdf

HGN036N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 2.7 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 3.8 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 138 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectificatio

 9.5. Size:776K  cn hunteck
 hgn036n08sl.pdf

HGN036N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 3.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 3.7 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 132 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronou

 9.6. Size:908K  cn hunteck
 hgn035n08a.pdf

HGN035N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 3 RDS(on),typ mW Enhanced Body diode dv/dt capability 121 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and High

 9.7. Size:766K  cn hunteck
 hgn036n08s.pdf

HGN036N08S P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 3.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 131 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch

 9.8. Size:958K  cn hunteck
 hgn035n10al.pdf

P-1 HGN035N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching,Logic Level 3.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 4.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 149 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free Application Drain Synchronous Rectific