HGN032NE4S Datasheet. Specs and Replacement

Type Designator: HGN032NE4S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 1348 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: DFN5X6

HGN032NE4S substitution

- MOSFET ⓘ Cross-Reference Search

 

HGN032NE4S datasheet

 ..1. Size:895K  cn hunteck
hgn032ne4s.pdf pdf_icon

HGN032NE4S

P-1 HGN032NE4S 45V N-Ch Power MOSFET Feature 45 V VDS Optimized for high speed switching 2.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 140 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard... See More ⇒

 9.1. Size:955K  cn hunteck
hgn035n10a.pdf pdf_icon

HGN032NE4S

P-1 HGN035N10A 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 3.1 RDS(on),typ mW Enhanced Avalanche Ruggedness 144 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Ci... See More ⇒

 9.2. Size:765K  cn hunteck
hgn036n08a.pdf pdf_icon

HGN032NE4S

HGN036N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 3.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 138 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch... See More ⇒

 9.3. Size:916K  cn hunteck
hgn035n08al.pdf pdf_icon

HGN032NE4S

HGN035N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic Level 3 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 4.2 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 118 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Recti... See More ⇒

Detailed specifications: HGN023NE6A, HGN023NE6AL, HGN024N06SL, HGN027N06S, HGN028N08A, HGN028NE6A, HGN028NE6AL, HGN029NE4SL, P60NF06, HGN035N08A, HGN035N08AL, HGN035N10A, HGN035N10AL, HGN036N08A, HGN036N08AL, HGN036N08S, HGN036N08SL

Keywords - HGN032NE4S MOSFET specs

 HGN032NE4S cross reference

 HGN032NE4S equivalent finder

 HGN032NE4S pdf lookup

 HGN032NE4S substitution

 HGN032NE4S replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.