All MOSFET. HGN032NE4S Datasheet

 

HGN032NE4S Datasheet and Replacement


   Type Designator: HGN032NE4S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1348 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: DFN5X6
 

 HGN032NE4S substitution

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HGN032NE4S Datasheet (PDF)

 ..1. Size:895K  cn hunteck
 hgn032ne4s.pdf pdf_icon

HGN032NE4S

P-1HGN032NE4S45V N-Ch Power MOSFETFeature45 VVDS Optimized for high speed switching2.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability140 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard

 9.1. Size:955K  cn hunteck
 hgn035n10a.pdf pdf_icon

HGN032NE4S

P-1HGN035N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ mW Enhanced Avalanche Ruggedness144 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed Ci

 9.2. Size:765K  cn hunteck
 hgn036n08a.pdf pdf_icon

HGN032NE4S

HGN036N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability138 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

 9.3. Size:916K  cn hunteck
 hgn035n08al.pdf pdf_icon

HGN032NE4S

HGN035N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.2RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness118 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Recti

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Datasheet: HGN023NE6A , HGN023NE6AL , HGN024N06SL , HGN027N06S , HGN028N08A , HGN028NE6A , HGN028NE6AL , HGN029NE4SL , AO3401 , HGN035N08A , HGN035N08AL , HGN035N10A , HGN035N10AL , HGN036N08A , HGN036N08AL , HGN036N08S , HGN036N08SL .

History: IRFP4568 | IRF1010EZPBF

Keywords - HGN032NE4S MOSFET datasheet

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