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HGN032NE4S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HGN032NE4S
   Маркировка: GN032NE4S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 45 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 54 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 1348 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0032 Ohm
   Тип корпуса: DFN5X6

 Аналог (замена) для HGN032NE4S

 

 

HGN032NE4S Datasheet (PDF)

 ..1. Size:895K  cn hunteck
 hgn032ne4s.pdf

HGN032NE4S HGN032NE4S

P-1HGN032NE4S45V N-Ch Power MOSFETFeature45 VVDS Optimized for high speed switching2.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability140 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard

 9.1. Size:955K  cn hunteck
 hgn035n10a.pdf

HGN032NE4S HGN032NE4S

P-1HGN035N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ mW Enhanced Avalanche Ruggedness144 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed Ci

 9.2. Size:765K  cn hunteck
 hgn036n08a.pdf

HGN032NE4S HGN032NE4S

HGN036N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability138 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

 9.3. Size:916K  cn hunteck
 hgn035n08al.pdf

HGN032NE4S HGN032NE4S

HGN035N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.2RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness118 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Recti

 9.4. Size:771K  cn hunteck
 hgn036n08al.pdf

HGN032NE4S HGN032NE4S

HGN036N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching2.7RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability3.8RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness138 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectificatio

 9.5. Size:776K  cn hunteck
 hgn036n08sl.pdf

HGN032NE4S HGN032NE4S

HGN036N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 3.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability3.7RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness132 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronou

 9.6. Size:908K  cn hunteck
 hgn035n08a.pdf

HGN032NE4S HGN032NE4S

HGN035N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3RDS(on),typ mW Enhanced Body diode dv/dt capability121 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High

 9.7. Size:766K  cn hunteck
 hgn036n08s.pdf

HGN032NE4S HGN032NE4S

HGN036N08S P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability131 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

 9.8. Size:958K  cn hunteck
 hgn035n10al.pdf

HGN032NE4S HGN032NE4S

P-1HGN035N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic Level3.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness149 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectific

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