HGN035N08AL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGN035N08AL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 706 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm

Encapsulados: DFN5X6

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HGN035N08AL datasheet

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HGN035N08AL

HGN035N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic Level 3 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 4.2 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 118 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Recti

 4.1. Size:908K  cn hunteck
 hgn035n08a.pdf pdf_icon

HGN035N08AL

HGN035N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 3 RDS(on),typ mW Enhanced Body diode dv/dt capability 121 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and High

 7.1. Size:955K  cn hunteck
 hgn035n10a.pdf pdf_icon

HGN035N08AL

P-1 HGN035N10A 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 3.1 RDS(on),typ mW Enhanced Avalanche Ruggedness 144 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Ci

 7.2. Size:958K  cn hunteck
 hgn035n10al.pdf pdf_icon

HGN035N08AL

P-1 HGN035N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching,Logic Level 3.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 4.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 149 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free Application Drain Synchronous Rectific

MOSTRAR MÁS

Otros transistores... HGN024N06SL, HGN027N06S, HGN028N08A, HGN028NE6A, HGN028NE6AL, HGN029NE4SL, HGN032NE4S, HGN035N08A, AO3400A, HGN035N10A, HGN035N10AL, HGN036N08A, HGN036N08AL, HGN036N08S, HGN036N08SL, HGN040N06S, HGN040N06SL