All MOSFET. HGN035N08AL Datasheet

 

HGN035N08AL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGN035N08AL
   Marking Code: GN035N08AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 68 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 706 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: DFN5X6

 HGN035N08AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGN035N08AL Datasheet (PDF)

 ..1. Size:916K  cn hunteck
 hgn035n08al.pdf

HGN035N08AL HGN035N08AL

HGN035N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.2RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness118 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Recti

 4.1. Size:908K  cn hunteck
 hgn035n08a.pdf

HGN035N08AL HGN035N08AL

HGN035N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3RDS(on),typ mW Enhanced Body diode dv/dt capability121 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High

 7.1. Size:955K  cn hunteck
 hgn035n10a.pdf

HGN035N08AL HGN035N08AL

P-1HGN035N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ mW Enhanced Avalanche Ruggedness144 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed Ci

 7.2. Size:958K  cn hunteck
 hgn035n10al.pdf

HGN035N08AL HGN035N08AL

P-1HGN035N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic Level3.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness149 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectific

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