HGN036N08S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGN036N08S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 114 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 566 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm

Encapsulados: DFN5X6

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HGN036N08S datasheet

 ..1. Size:766K  cn hunteck
 hgn036n08s.pdf pdf_icon

HGN036N08S

HGN036N08S P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 3.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 131 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch

 0.1. Size:776K  cn hunteck
 hgn036n08sl.pdf pdf_icon

HGN036N08S

HGN036N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 3.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 3.7 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 132 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronou

 5.1. Size:765K  cn hunteck
 hgn036n08a.pdf pdf_icon

HGN036N08S

HGN036N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 3.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 138 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch

 5.2. Size:771K  cn hunteck
 hgn036n08al.pdf pdf_icon

HGN036N08S

HGN036N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 2.7 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 3.8 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 138 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectificatio

MOSTRAR MÁS

Otros transistores... HGN029NE4SL, HGN032NE4S, HGN035N08A, HGN035N08AL, HGN035N10A, HGN035N10AL, HGN036N08A, HGN036N08AL, IRFZ48N, HGN036N08SL, HGN040N06S, HGN040N06SL, HGN042N10A, HGN042N10AL, HGN042N10S, HGN042N10SL, HGN045NE4SL