HGN036N08S MOSFET Datasheet: N-Ch, 80V, 60A. Full specification with pinout and replacement list

HGN036N08S Specs and Replacement

   Type Designator: HGN036N08S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 566 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: DFN5X6

HGN036N08S substitution

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HGN036N08S datasheet

..1. Size:766K cn hunteck
hgn036n08s.pdf pdf_icon

HGN036N08S P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 3.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 131 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch... See More ⇒

0.1. Size:776K cn hunteck
hgn036n08sl.pdf pdf_icon

HGN036N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 3.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 3.7 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 132 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronou... See More ⇒

5.1. Size:765K cn hunteck
hgn036n08a.pdf pdf_icon

HGN036N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 3.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 138 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch... See More ⇒

5.2. Size:771K cn hunteck
hgn036n08al.pdf pdf_icon

HGN036N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 2.7 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 3.8 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 138 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectificatio... See More ⇒

Detailed specifications: HGN029NE4SL , HGN032NE4S , HGN035N08A , HGN035N08AL , HGN035N10A , HGN035N10AL , HGN036N08A , HGN036N08AL , IRFZ48N , HGN036N08SL , HGN040N06S , HGN040N06SL , HGN042N10A , HGN042N10AL , HGN042N10S , HGN042N10SL , HGN045NE4SL .