HGN042N10A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGN042N10A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 1110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm

Encapsulados: DFN5X6

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HGN042N10A datasheet

 ..1. Size:777K  cn hunteck
 hgn042n10a.pdf pdf_icon

HGN042N10A

HGN042N10A P-1 100V N-Ch Power MOSFET 100 V VDS Feature 3.7 RDS(on),typ m Optimized for high speed smooth switching 128 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application DC-DC Conversion Drain Hard Switching and

 0.1. Size:786K  cn hunteck
 hgn042n10al.pdf pdf_icon

HGN042N10A

HGN042N10AL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 3.4 RDS(on),typ VGS=10V m Optimized for high speed smooth switching,Logic level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 129 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application

 5.1. Size:1155K  cn hunteck
 hgn042n10s.pdf pdf_icon

HGN042N10A

HGN042N10S P-1 100V N-Ch Power MOSFET VDS Feature 100 V 3.7 RDS(on),typ mW Optimized for high speed smooth switching 112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application DC-DC Conversion Drain Hard Switching

 5.2. Size:1077K  cn hunteck
 hgn042n10sl.pdf pdf_icon

HGN042N10A

P-1 HGN042N10SL 100V N-Ch Power MOSFET 100 V Feature VDS 3.5 Optimized for high speed smooth switching,Logic Level RDS(on),typ VGS=10V mW 4.4 RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability 116 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application

MOSTRAR MÁS

Otros transistores... HGN035N10A, HGN035N10AL, HGN036N08A, HGN036N08AL, HGN036N08S, HGN036N08SL, HGN040N06S, HGN040N06SL, IRF9640, HGN042N10AL, HGN042N10S, HGN042N10SL, HGN045NE4SL, HGN046NE6A, HGN046NE6AL, HGN050N10A, HGN050N10AL