HGN042N10A Datasheet and Replacement
Type Designator: HGN042N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 1110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: DFN5X6
HGN042N10A substitution
HGN042N10A Datasheet (PDF)
hgn042n10a.pdf

HGN042N10A P-1100V N-Ch Power MOSFET100 VVDSFeature3.7RDS(on),typ m Optimized for high speed smooth switching128 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching and
hgn042n10al.pdf

HGN042N10AL P-1100V N-Ch Power MOSFET100 VVDSFeature3.4RDS(on),typ VGS=10V m Optimized for high speed smooth switching,Logic level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability129 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication
hgn042n10s.pdf

HGN042N10S P-1100V N-Ch Power MOSFET VDSFeature 100 V3.7 RDS(on),typ mW Optimized for high speed smooth switching112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching
hgn042n10sl.pdf

P-1HGN042N10SL100V N-Ch Power MOSFET100 VFeature VDS3.5 Optimized for high speed smooth switching,Logic Level RDS(on),typ VGS=10V mW4.4RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability116 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication
Datasheet: HGN035N10A , HGN035N10AL , HGN036N08A , HGN036N08AL , HGN036N08S , HGN036N08SL , HGN040N06S , HGN040N06SL , AON7403 , HGN042N10AL , HGN042N10S , HGN042N10SL , HGN045NE4SL , HGN046NE6A , HGN046NE6AL , HGN050N10A , HGN050N10AL .
History: 2N3687 | IRFU2905ZPBF | CJA9452 | MPSY65M650 | CJD01N65B | BL23N50-W | AO4614B
Keywords - HGN042N10A MOSFET datasheet
HGN042N10A cross reference
HGN042N10A equivalent finder
HGN042N10A lookup
HGN042N10A substitution
HGN042N10A replacement
History: 2N3687 | IRFU2905ZPBF | CJA9452 | MPSY65M650 | CJD01N65B | BL23N50-W | AO4614B



LIST
Last Update
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
13005 transistor | ecg123a | irfp360 | bc108 equivalent | irfp4568 | mj15004 | ksc2073 | nte102a