HGN042N10A Datasheet. Specs and Replacement

Type Designator: HGN042N10A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 1110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: DFN5X6

HGN042N10A substitution

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HGN042N10A datasheet

 ..1. Size:777K  cn hunteck
 hgn042n10a.pdf pdf_icon

HGN042N10A

HGN042N10A P-1 100V N-Ch Power MOSFET 100 V VDS Feature 3.7 RDS(on),typ m Optimized for high speed smooth switching 128 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application DC-DC Conversion Drain Hard Switching and... See More ⇒

 0.1. Size:786K  cn hunteck
 hgn042n10al.pdf pdf_icon

HGN042N10A

HGN042N10AL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 3.4 RDS(on),typ VGS=10V m Optimized for high speed smooth switching,Logic level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 129 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application ... See More ⇒

 5.1. Size:1155K  cn hunteck
 hgn042n10s.pdf pdf_icon

HGN042N10A

HGN042N10S P-1 100V N-Ch Power MOSFET VDS Feature 100 V 3.7 RDS(on),typ mW Optimized for high speed smooth switching 112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application DC-DC Conversion Drain Hard Switching ... See More ⇒

 5.2. Size:1077K  cn hunteck
 hgn042n10sl.pdf pdf_icon

HGN042N10A

P-1 HGN042N10SL 100V N-Ch Power MOSFET 100 V Feature VDS 3.5 Optimized for high speed smooth switching,Logic Level RDS(on),typ VGS=10V mW 4.4 RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability 116 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application ... See More ⇒

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Detailed specifications: HGN035N10A, HGN035N10AL, HGN036N08A, HGN036N08AL, HGN036N08S, HGN036N08SL, HGN040N06S, HGN040N06SL, IRF9640, HGN042N10AL, HGN042N10S, HGN042N10SL, HGN045NE4SL, HGN046NE6A, HGN046NE6AL, HGN050N10A, HGN050N10AL

Keywords - HGN042N10A MOSFET specs

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