HGN045NE4SL Todos los transistores

 

HGN045NE4SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN045NE4SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 756 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: DFN5X6

 Búsqueda de reemplazo de MOSFET HGN045NE4SL

 

HGN045NE4SL Datasheet (PDF)

 ..1. Size:774K  cn hunteck
hgn045ne4sl.pdf

HGN045NE4SL
HGN045NE4SL

HGN045NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature3.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability101 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn

 9.1. Size:1155K  cn hunteck
hgn042n10s.pdf

HGN045NE4SL
HGN045NE4SL

HGN042N10S P-1100V N-Ch Power MOSFET VDSFeature 100 V3.7 RDS(on),typ mW Optimized for high speed smooth switching112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching

 9.2. Size:786K  cn hunteck
hgn042n10al.pdf

HGN045NE4SL
HGN045NE4SL

HGN042N10AL P-1100V N-Ch Power MOSFET100 VVDSFeature3.4RDS(on),typ VGS=10V m Optimized for high speed smooth switching,Logic level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability129 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication

 9.3. Size:893K  cn hunteck
hgn046ne6a.pdf

HGN045NE4SL
HGN045NE4SL

HGN046NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching4.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability94 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switchin

 9.4. Size:777K  cn hunteck
hgn042n10a.pdf

HGN045NE4SL
HGN045NE4SL

HGN042N10A P-1100V N-Ch Power MOSFET100 VVDSFeature3.7RDS(on),typ m Optimized for high speed smooth switching128 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching and

 9.5. Size:899K  cn hunteck
hgn040n06s.pdf

HGN045NE4SL
HGN045NE4SL

HGN040N06S P-160V N-Ch Power MOSFET60 VFeature VDS3.4 Optimized for high speed switching RDS(on),typ mW125 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

 9.6. Size:1077K  cn hunteck
hgn042n10sl.pdf

HGN045NE4SL
HGN045NE4SL

P-1HGN042N10SL100V N-Ch Power MOSFET100 VFeature VDS3.5 Optimized for high speed smooth switching,Logic Level RDS(on),typ VGS=10V mW4.4RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability116 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication

 9.7. Size:779K  cn hunteck
hgn040n06sl.pdf

HGN045NE4SL
HGN045NE4SL

HGN040N06SL P-160V N-Ch Power MOSFET60 VVDSFeature3.2RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.4RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability120 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn

 9.8. Size:893K  cn hunteck
hgn046ne6al.pdf

HGN045NE4SL
HGN045NE4SL

HGN046NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level3.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness95 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested45 AID (Pacakge Limited) Lead Free, Halogen FreeApplicationDrain Synchrono

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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