HGN045NE4SL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGN045NE4SL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 756 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: DFN5X6

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HGN045NE4SL datasheet

 ..1. Size:774K  cn hunteck
hgn045ne4sl.pdf pdf_icon

HGN045NE4SL

HGN045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 101 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn

 9.1. Size:1155K  cn hunteck
hgn042n10s.pdf pdf_icon

HGN045NE4SL

HGN042N10S P-1 100V N-Ch Power MOSFET VDS Feature 100 V 3.7 RDS(on),typ mW Optimized for high speed smooth switching 112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application DC-DC Conversion Drain Hard Switching

 9.2. Size:786K  cn hunteck
hgn042n10al.pdf pdf_icon

HGN045NE4SL

HGN042N10AL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 3.4 RDS(on),typ VGS=10V m Optimized for high speed smooth switching,Logic level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 129 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application

 9.3. Size:893K  cn hunteck
hgn046ne6a.pdf pdf_icon

HGN045NE4SL

HGN046NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 4.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 94 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 45 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switchin

Otros transistores... HGN036N08S, HGN036N08SL, HGN040N06S, HGN040N06SL, HGN042N10A, HGN042N10AL, HGN042N10S, HGN042N10SL, EMB04N03H, HGN046NE6A, HGN046NE6AL, HGN050N10A, HGN050N10AL, HGN052N10SL, HGN053N06S, HGN053N06SL, HGN055N12S