HGN045NE4SL Datasheet. Specs and Replacement

Type Designator: HGN045NE4SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 756 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: DFN5X6

HGN045NE4SL substitution

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HGN045NE4SL datasheet

 ..1. Size:774K  cn hunteck
hgn045ne4sl.pdf pdf_icon

HGN045NE4SL

HGN045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 101 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn... See More ⇒

 9.1. Size:1155K  cn hunteck
hgn042n10s.pdf pdf_icon

HGN045NE4SL

HGN042N10S P-1 100V N-Ch Power MOSFET VDS Feature 100 V 3.7 RDS(on),typ mW Optimized for high speed smooth switching 112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application DC-DC Conversion Drain Hard Switching ... See More ⇒

 9.2. Size:786K  cn hunteck
hgn042n10al.pdf pdf_icon

HGN045NE4SL

HGN042N10AL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 3.4 RDS(on),typ VGS=10V m Optimized for high speed smooth switching,Logic level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 129 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application ... See More ⇒

 9.3. Size:893K  cn hunteck
hgn046ne6a.pdf pdf_icon

HGN045NE4SL

HGN046NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 4.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 94 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 45 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switchin... See More ⇒

Detailed specifications: HGN036N08S, HGN036N08SL, HGN040N06S, HGN040N06SL, HGN042N10A, HGN042N10AL, HGN042N10S, HGN042N10SL, EMB04N03H, HGN046NE6A, HGN046NE6AL, HGN050N10A, HGN050N10AL, HGN052N10SL, HGN053N06S, HGN053N06SL, HGN055N12S

Keywords - HGN045NE4SL MOSFET specs

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