HGN088N15S Todos los transistores

 

HGN088N15S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGN088N15S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 139 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 333 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm
   Paquete / Cubierta: DFN5X6
 

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HGN088N15S Datasheet (PDF)

 ..1. Size:1189K  cn hunteck
 hgn088n15s.pdf pdf_icon

HGN088N15S

HGN088N15SP-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 7.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 86 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Ha

 0.1. Size:951K  cn hunteck
 hgn088n15sl.pdf pdf_icon

HGN088N15S

HGN088N15SL P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness87 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectification i

 9.1. Size:920K  cn hunteck
 hgn080n10sl.pdf pdf_icon

HGN088N15S

HGN080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

 9.2. Size:893K  cn hunteck
 hgn080n10al.pdf pdf_icon

HGN088N15S

HGN080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74.4 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

MOSTRAR MÁS

Otros transistores... HGN070N12S , HGN070N12SL , HGN077N10SL , HGN080N08SL , HGN080N10A , HGN080N10AL , HGN080N10S , HGN080N10SL , IRFP260N , HGN088N15SL , HGN090AE6AL , HGN090N06SL , HGN090NE6A , HGN090NE6AL , HGN093N12S , HGN093N12SL , HGN095NE4SL .

History: AP72T02GH | STL90N3LLH6 | NCE70N1K1K | STU336S

 

 
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