HGN088N15S Datasheet. Equivalente

 ..1. Size:1189K  cn hunteck
 hgn088n15s.pdf

HGN088N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 7.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 86 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Ha

 0.1. Size:951K  cn hunteck
 hgn088n15sl.pdf

HGN088N15SL P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 7.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 8.8 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 87 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification i

 9.1. Size:920K  cn hunteck
 hgn080n10sl.pdf

HGN080N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 6.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 7.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 74 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Re

 9.2. Size:893K  cn hunteck
 hgn080n10al.pdf

HGN080N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 6.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 8.8 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 74.4 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous

 9.3. Size:898K  cn hunteck
 hgn080n10a.pdf

P-1 HGN080N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 6.8 RDS(on),typ mW Enhanced Body diode dv/dt capability 76 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/DC in Telecoms and I

 9.4. Size:912K  cn hunteck
 hgn080n10s.pdf

HGN080N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 6.7 RDS(on),typ mW Enhanced Avalanche Ruggedness 74 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Pin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

 9.5. Size:765K  cn hunteck
 hgn080n08sl.pdf

HGN080N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic Level VGS=10V 6.3 RDS(on),typ m Enhanced Body diode dv/dt capability VGS=4.5V 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness 85 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 70 A ID (Package Limited) Lead Free, Halogen Free Application Synchronou