HGN088N15S
MOSFET. Datasheet pdf. Equivalent
Type Designator: HGN088N15S
Marking Code: GN088N15S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 139
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 52
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 333
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088
Ohm
Package:
DFN5X6
HGN088N15S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGN088N15S
Datasheet (PDF)
..1. Size:1189K cn hunteck
hgn088n15s.pdf 
HGN088N15SP-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 7.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 86 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Ha
0.1. Size:951K cn hunteck
hgn088n15sl.pdf
HGN088N15SL P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness87 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectification i
9.1. Size:920K cn hunteck
hgn080n10sl.pdf
HGN080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re
9.2. Size:893K cn hunteck
hgn080n10al.pdf
HGN080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74.4 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous
9.3. Size:898K cn hunteck
hgn080n10a.pdf
P-1HGN080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching6.8RDS(on),typ mW Enhanced Body diode dv/dt capability76 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in Telecoms and I
9.4. Size:912K cn hunteck
hgn080n10s.pdf
HGN080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability6.7RDS(on),typ mW Enhanced Avalanche Ruggedness74 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms
9.5. Size:765K cn hunteck
hgn080n08sl.pdf
HGN080N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic LevelVGS=10V6.3RDS(on),typ m Enhanced Body diode dv/dt capabilityVGS=4.5V8.7RDS(on),typ m Enhanced Avalanche Ruggedness85 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronou
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