SP2103 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SP2103
Código: 2103
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.5 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 2.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.9 V
Carga de la puerta (Qg): 7.5 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 34 pF
Resistencia entre drenaje y fuente RDS(on): 0.22 Ohm
Paquete / Cubierta: PDFN5X6
Búsqueda de reemplazo de MOSFET SP2103
SP2103 Datasheet (PDF)
sp2103.pdf
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sp2102.pdf
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sp2107.pdf
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sp2106.pdf
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sp2108.pdf
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GreenProductSP2108aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.811 @ VGS=10VSuface Mount Package.100V 1.2A932 @ VGS=4.5VESD Protected.5 4D2 G 26D2 3S 2PIN1D1 7 2 G 18 1D1 S 1PDFN 5x6
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