SP2103 MOSFET Datasheet: N-Ch, 100V, 2.2A. Full specification with pinout and replacement list

SP2103 Specs and Replacement

Type Designator: SP2103

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: PDFN5X6

SP2103 substitution

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SP2103 datasheet

..1. Size:111K samhop
sp2103.pdf pdf_icon

Green Product SP2103 a S mHop Microelectronics C orp. Ver 1.3 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 220 @ VGS=10V Suface Mount Package. 100V 2.2A 350 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless ... See More ⇒

9.1. Size:119K samhop
sp2102.pdf pdf_icon

Green Product SP2102 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 100V 2.0A 216 @ VGS=10V Suface Mount Package. D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) ... See More ⇒

9.2. Size:111K samhop
sp2107.pdf pdf_icon

Green Product SP2107 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Max Rugged and reliable. 0.8 @ VGS=10V Suface Mount Package. 100V 1.2A 0.93 @ VGS=4.5V ESD Protected. 5 4 D2 G 2 6 3 D2 S 2 PIN1 D1 7 2 G 1 8 1 D1 S 1 PDFN 5x6 A... See More ⇒

9.3. Size:110K samhop
sp2106.pdf pdf_icon

Green Product SP2106 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Max Rugged and reliable. 2.0 @ VGS=10V Suface Mount Package. 100V 1A 2.4 @ VGS=4.5V ESD Protected. 5 4 D2 G 2 6 3 D2 S 2 PIN1 D1 7 2 G 1 8 1 D1 S 1 PDFN 5x6 ABSO... See More ⇒