FDS8958B Todos los transistores

 

FDS8958B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS8958B

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2 nS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: SO-8

 Búsqueda de reemplazo de FDS8958B MOSFET

- Selecciónⓘ de transistores por parámetros

 

FDS8958B datasheet

 ..1. Size:1203K  fairchild semi
 fds8958b.pdf pdf_icon

FDS8958B

November 2013 FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel 30 V, 6.4 A, 26 m Q2-P-Channel -30 V, -4.5 A, 51 m Features General Description These dual N- and P-Channel enhancement mode power field Q1 N-Channel effect transistors are produced using Fairchild Semiconductor's Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 A advanced PowerTrench process th at

 ..2. Size:635K  onsemi
 fds8958b.pdf pdf_icon

FDS8958B

FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel 30 V, 6.4 A, 26 m Q2-P-Channel -30 V, -4.5 A, 51 m General Description Features These dual N- and P-Channel enhancement mode power field Q1 N-Channel effect transistors are produced using ON Semiconductor's advanced PowerTrench process th at has been especially Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 A

 7.1. Size:521K  fairchild semi
 fds8958a.pdf pdf_icon

FDS8958B

April 2008 tm FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1 N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.

 7.2. Size:798K  fairchild semi
 fds8958a f085.pdf pdf_icon

FDS8958B

February 2010 tm FDS8958A_F085 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1 N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize RDS(on

MOSTRAR MÁS

Otros transistores... SP2107 , SP2106 , FDS8935 , FDS8949 , FDS8949F085 , FDS8958AF085 , SP2103 , SP2102 , IRFZ46N , SP2013 , SP07N65 , FDS8978 , 2SK3116B , FDS8984 , SDU07N65 , FDS8984F085 , SDU06N60 .

 

 

 

 

↑ Back to Top
.