FDS8958B MOSFET Datasheet: NP-Ch, 30V, 6.4A. Full specification with pinout and replacement list

FDS8958B Specs and Replacement

Type Designator: FDS8958B

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SO-8

FDS8958B substitution

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FDS8958B datasheet

..1. Size:1203K fairchild semi
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November 2013 FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel 30 V, 6.4 A, 26 m Q2-P-Channel -30 V, -4.5 A, 51 m Features General Description These dual N- and P-Channel enhancement mode power field Q1 N-Channel effect transistors are produced using Fairchild Semiconductor's Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 A advanced PowerTrench process th at... See More ⇒

..2. Size:635K onsemi
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FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel 30 V, 6.4 A, 26 m Q2-P-Channel -30 V, -4.5 A, 51 m General Description Features These dual N- and P-Channel enhancement mode power field Q1 N-Channel effect transistors are produced using ON Semiconductor's advanced PowerTrench process th at has been especially Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 A ... See More ⇒

7.1. Size:521K fairchild semi
fds8958a.pdf pdf_icon

April 2008 tm FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1 N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.... See More ⇒

7.2. Size:798K fairchild semi
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February 2010 tm FDS8958A_F085 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1 N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize RDS(on... See More ⇒