FDS8958B - Даташиты. Аналоги. Основные параметры
Наименование производителя: FDS8958B
Тип транзистора: MOSFET
Полярность: NP
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 2 ns
Cossⓘ - Выходная емкость: 75 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
Тип корпуса: SO-8
Аналог (замена) для FDS8958B
FDS8958B Datasheet (PDF)
fds8958b.pdf

November 2013FDS8958BDual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m Q2-P-Channel: -30 V, -4.5 A, 51 mFeatures General DescriptionThese dual N- and P-Channel enhancement mode power field Q1: N-Channeleffect transistors are produced using Fairchild Semiconductor's Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 Aadvanced PowerTrench process th at
fds8958b.pdf

FDS8958BDual N & P-Channel PowerTrench MOSFETQ1-N-Channel: 30 V, 6.4 A, 26 m Q2-P-Channel: -30 V, -4.5 A, 51 mGeneral DescriptionFeaturesThese dual N- and P-Channel enhancement mode power field Q1: N-Channeleffect transistors are produced using ON Semiconductor's advanced PowerTrench process th at has been especially Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 A
fds8958a.pdf

April 2008tmFDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.
fds8958a f085.pdf

February 2010tmFDS8958A_F085 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize RDS(on
Другие MOSFET... SP2107 , SP2106 , FDS8935 , FDS8949 , FDS8949F085 , FDS8958AF085 , SP2103 , SP2102 , RU7088R , SP2013 , SP07N65 , FDS8978 , 2SK3116B , FDS8984 , SDU07N65 , FDS8984F085 , SDU06N60 .
History: APM2306A | JMSL0406AGQ | 2SK1399 | BSP75G | 2SK1494-Z | SDF4N60 | HM2310B
History: APM2306A | JMSL0406AGQ | 2SK1399 | BSP75G | 2SK1494-Z | SDF4N60 | HM2310B



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