HGP050N10AL Datasheet. Equivalente

 ..1. Size:985K  cn hunteck
 hgp050n10al.pdf

HGP050N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 4.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 125 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and

 4.1. Size:975K  cn hunteck
 hgb050n10a hgp050n10a.pdf

, P-1 HGB050N10A HGP050N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 4.5 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 4.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 125 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS TO-220 TO-263 Hard Switching and Hig

 6.1. Size:851K  cn hunteck
 hgb050n14s hgp050n14s.pdf

, HGB050N14S HGP050N14S P-1 135V N-Ch Power MOSFET Feature 135 V VDS High Speed Power Smooth Switching 4.5 RDS(on),TYP m Enhanced Body diode dv/dt capability 175 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 180 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching a

 9.1. Size:919K  cn hunteck
 hgb059n08a hgp059n08a.pdf

, P-1 HGB059N08A HGP059N08A 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 5.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 97 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain

 9.2. Size:849K  cn hunteck
 hgb059n12s hgp059n12s.pdf

, HGB059N12S HGP059N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 4.4 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 4.7 RDS(on),typ m Enhanced Avalanche Ruggedness 160 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synchronous Rectif

 9.3. Size:1121K  cn hunteck
 hgb057n15s hgk057n15s hgp057n15s.pdf

, HGB057N15S HGK057N15S P-1 HGP057N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 5.3 RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-247 5.4 RDS(on),TYP mW Enhanced Avalanche Ruggedness TO-220 5.5 RDS(on),TYP mW 100% UIS Tested, 100% Rg Tested 161 A Lead Free ID (Sillicon Limited) Application Synchr

 9.4. Size:810K  cn hunteck
 hgb058n08sl hgp058n08sl.pdf

HGB058N08SL, HGP058N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching,Logic Level 4.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.6 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 4.3 RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested 5.9 RDS(on),typ VGS=4.5V m Lead Free 130 A ID (Sillicon Limit

 9.5. Size:851K  cn hunteck
 hgb059n12sl hgp059n12sl.pdf

, HGB059N12SL HGP059N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching, Logic Level TO-263 4.7 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 5.3 RDS(on),typ m Enhanced Avalanche Ruggedness 160 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Syn

 9.6. Size:978K  cn hunteck
 hgb055n12s hgp055n12s.pdf

, P-1 HGB055N12S HGP055N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 4.8 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 5.1 RDS(on),typ mW Enhanced Avalanche Ruggedness 146 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switchi

 9.7. Size:820K  cn hunteck
 hgb053n06sl hgp053n06sl.pdf

HGB053N06SL , HGP053N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 3.9 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.3 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 4.1 RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested 5.6 RDS(on),typ VGS=4.5V m Lead Free, Halogen Free 105 A ID

 9.8. Size:926K  cn hunteck
 hgb053n06s hgp053n06s.pdf

, P-1 HGB053N06S HGP053N06S 60V N-Ch Power MOSFET 60 V VDS Feature TO-263 4.3 RDS(on),typ mW Optimized for high speed switching TO-220 4.6 RDS(on),typ mW Enhanced Body diode dv/dt capability 112 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchrono