HGP050N10AL Datasheet. Specs and Replacement

Type Designator: HGP050N10AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 179 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 125 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 562 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: TO-220

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HGP050N10AL datasheet

 ..1. Size:985K  cn hunteck
 hgp050n10al.pdf pdf_icon

HGP050N10AL

HGP050N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 4.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 125 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and... See More ⇒

 4.1. Size:975K  cn hunteck
 hgb050n10a hgp050n10a.pdf pdf_icon

HGP050N10AL

, P-1 HGB050N10A HGP050N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 4.5 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 4.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 125 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS TO-220 TO-263 Hard Switching and Hig... See More ⇒

 6.1. Size:851K  cn hunteck
 hgb050n14s hgp050n14s.pdf pdf_icon

HGP050N10AL

, HGB050N14S HGP050N14S P-1 135V N-Ch Power MOSFET Feature 135 V VDS High Speed Power Smooth Switching 4.5 RDS(on),TYP m Enhanced Body diode dv/dt capability 175 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 180 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching a... See More ⇒

 9.1. Size:919K  cn hunteck
 hgb059n08a hgp059n08a.pdf pdf_icon

HGP050N10AL

, P-1 HGB059N08A HGP059N08A 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 5.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 97 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

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Detailed specifications: HGN480N15M, HGN640N25S, HGN650N15S, HGN650N15SL, HGP028NE6AL, HGP035N08AL, HGP042N10AL, HGP045NE4SL, IRFP250, HGP070N12SL, HGP080N10S, HGP080N10SL, HGP098N10S, HGP100N12SL, HGP130N12SL, HGP190N15SL, HGP195N15SL

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