HGP100N12SL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGP100N12SL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 109 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 242 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO-220

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HGP100N12SL datasheet

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 hgp100n12sl.pdf pdf_icon

HGP100N12SL

HGP100N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching,Logic level 7.8 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 8.6 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 109 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switchin

 4.1. Size:813K  cn hunteck
 hgb100n12s hgp100n12s.pdf pdf_icon

HGP100N12SL

, HGB100N12S HGP100N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching TO-263 8.3 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 8.6 RDS(on),typ m Enhanced Avalanche Ruggedness 109 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching

 9.1. Size:979K  cn hunteck
 hgb105n15s hgp105n15s.pdf pdf_icon

HGP100N12SL

, HGB105N15S HGP105N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 9.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 104 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS

 9.2. Size:872K  cn hunteck
 hgb105n15m hgk105n15m hgp105n15m.pdf pdf_icon

HGP100N12SL

, P-1 HGB105N15M HGK105N15M HGP105N15M 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 8.5 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 8.8 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 120 A ID (Sillicon Limited) Lead Free Application Synch

MOSTRAR MÁS

Otros transistores... HGP035N08AL, HGP042N10AL, HGP045NE4SL, HGP050N10AL, HGP070N12SL, HGP080N10S, HGP080N10SL, HGP098N10S, RFP50N06, HGP130N12SL, HGP190N15SL, HGP195N15SL, HGP1K2N20ML, HGP1K2N25ML, HGP230N10A, HGP2K4N25ML, HGS038NE4SL