All MOSFET. HGP100N12SL Datasheet

 

HGP100N12SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGP100N12SL
   Marking Code: GP100N12SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 125 W
   Maximum Drain-Source Voltage |Vds|: 120 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V
   Maximum Drain Current |Id|: 109 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 66 nC
   Rise Time (tr): 21 nS
   Drain-Source Capacitance (Cd): 242 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
   Package: TO-220

 HGP100N12SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGP100N12SL Datasheet (PDF)

 ..1. Size:802K  cn hunteck
hgp100n12sl.pdf

HGP100N12SL
HGP100N12SL

HGP100N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic level7.8RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness109 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchin

 4.1. Size:813K  cn hunteck
hgb100n12s hgp100n12s.pdf

HGP100N12SL
HGP100N12SL

,HGB100N12S HGP100N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-263 8.3RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 8.6RDS(on),typ m Enhanced Avalanche Ruggedness109 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching

 9.1. Size:979K  cn hunteck
hgb105n15s hgp105n15s.pdf

HGP100N12SL
HGP100N12SL

,HGB105N15S HGP105N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power SwitchingTO-263 9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 9.3RDS(on),typ mW Enhanced Avalanche Ruggedness104 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

 9.2. Size:872K  cn hunteck
hgb105n15m hgk105n15m hgp105n15m.pdf

HGP100N12SL
HGP100N12SL

, P-1HGB105N15M HGK105N15MHGP105N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 8.5RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 8.7RDS(on),typ m Enhanced Avalanche RuggednessTO-220 8.8RDS(on),typ m 100% UIS Tested, 100% Rg Tested120 AID (Sillicon Limited) Lead FreeApplication Synch

 9.3. Size:855K  cn hunteck
hgb105n15sl hgp105n15sl.pdf

HGP100N12SL
HGP100N12SL

HGB105N15SL HGP105N15SL, P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching, Logic LevelTO-263 8.7RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 9RDS(on),typ m Enhanced Avalanche Ruggedness122 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synch

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