HGP190N15SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGP190N15SL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 214 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 69 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 158 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de HGP190N15SL MOSFET
HGP190N15SL Datasheet (PDF)
hgp190n15sl.pdf

HGP190N15SL P-1150V N-Ch Power MOSFET150 VVDSFeature16.0RDS(on),typ VGS=10V m Optimized for high speed smooth 19RDS(on),typ VGS=4.5V mswitching,Logic level 69 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Drain Hard Switching and H
hgb190n15s hgp190n15s.pdf

HGB190N15S HGP190N15S P-1,150V N-Ch Power MOSFET150 VVDSFeatureTO-263 15.7RDS(on),typ m Optimized for high speed smooth switchingTO-220 16RDS(on),typ m Enhanced Body diode dv/dt capability80 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication
hgp195n15sl.pdf

P-1HGP195N15SL150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level17.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness53 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrai
hgb195n15s hgp195n15s.pdf

, P-1HGB195N15SHGP195N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power SwitchingTO-263 16.0RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 16.3RDS(on),typ mW Enhanced Avalanche Ruggedness59 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
Otros transistores... HGP045NE4SL , HGP050N10AL , HGP070N12SL , HGP080N10S , HGP080N10SL , HGP098N10S , HGP100N12SL , HGP130N12SL , 7N60 , HGP195N15SL , HGP1K2N20ML , HGP1K2N25ML , HGP230N10A , HGP2K4N25ML , HGS038NE4SL , HGS046NE6A , HGS046NE6AL .
History: HGK012NE6A | FDN86501LZ
History: HGK012NE6A | FDN86501LZ



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