All MOSFET. HGP190N15SL Datasheet

 

HGP190N15SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGP190N15SL
   Marking Code: P190N15SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 69 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO-220

 HGP190N15SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGP190N15SL Datasheet (PDF)

 ..1. Size:774K  cn hunteck
 hgp190n15sl.pdf

HGP190N15SL HGP190N15SL

HGP190N15SL P-1150V N-Ch Power MOSFET150 VVDSFeature16.0RDS(on),typ VGS=10V m Optimized for high speed smooth 19RDS(on),typ VGS=4.5V mswitching,Logic level 69 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Drain Hard Switching and H

 4.1. Size:813K  cn hunteck
 hgb190n15s hgp190n15s.pdf

HGP190N15SL HGP190N15SL

HGB190N15S HGP190N15S P-1,150V N-Ch Power MOSFET150 VVDSFeatureTO-263 15.7RDS(on),typ m Optimized for high speed smooth switchingTO-220 16RDS(on),typ m Enhanced Body diode dv/dt capability80 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication

 9.1. Size:909K  cn hunteck
 hgp195n15sl.pdf

HGP190N15SL HGP190N15SL

P-1HGP195N15SL150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level17.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness53 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrai

 9.2. Size:984K  cn hunteck
 hgb195n15s hgp195n15s.pdf

HGP190N15SL HGP190N15SL

, P-1HGB195N15SHGP195N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power SwitchingTO-263 16.0RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 16.3RDS(on),typ mW Enhanced Avalanche Ruggedness59 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

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