HGS095NE4SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGS095NE4SL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 309 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
Paquete / Cubierta: SOIC-8
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HGS095NE4SL Datasheet (PDF)
hgs095ne4sl.pdf

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hgs098n10sl.pdf

HGS098N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 8.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness13 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching a
Otros transistores... HGS080N10SL , HGS085N10SL , HGS085NE6AL , HGS089N08SL , HGS090N06SL , HGS090NE6A , HGS090NE6AL , HGS092NE6AL , 2SK3918 , HGS098N06SL , HGS098N10A , HGS098N10AL , HGS098N10SL , HGS110N08A , HGS110N08AL , HGS120N06SL , HGS120N10AL .
History: STD70N6F3 | HGS098N10AL | FQD3P20TF | 2SJ238 | AOWF600A70 | 2SK827 | OSG60R580DT3F
History: STD70N6F3 | HGS098N10AL | FQD3P20TF | 2SJ238 | AOWF600A70 | 2SK827 | OSG60R580DT3F



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