All MOSFET. HGS095NE4SL Datasheet

 

HGS095NE4SL Datasheet and Replacement


   Type Designator: HGS095NE4SL
   Marking Code: GS095NE4SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 13.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14.5 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 309 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: SOIC-8
 

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HGS095NE4SL Datasheet (PDF)

 ..1. Size:901K  cn hunteck
 hgs095ne4sl.pdf pdf_icon

HGS095NE4SL

HGS095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness13.5 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swi

 9.1. Size:912K  cn hunteck
 hgs098n10a.pdf pdf_icon

HGS095NE4SL

HGS098N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching 8.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainSOIC-8Pin2 Hard Switching and High Speed Circuit2

 9.2. Size:817K  cn hunteck
 hgs090n06sl.pdf pdf_icon

HGS095NE4SL

HGS090N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching,Logic level 7.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10.2RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainSOIC-8Pin2

 9.3. Size:915K  cn hunteck
 hgs098n10sl.pdf pdf_icon

HGS095NE4SL

HGS098N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 8.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness13 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching a

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History: AO4472 | SWY7N65D

Keywords - HGS095NE4SL MOSFET datasheet

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