FDS9431AF085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDS9431AF085
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 170 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de FDS9431AF085 MOSFET
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FDS9431AF085 datasheet
fds9431a.pdf
September 1999 FDS9431A P-Channel 2.5V Specified MOSFET Features General Description This P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 V using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 0.180 @ VGS = -2.5 V. technology. This very high density process has been especially tailored to minimize on-state resistance and
fds9431a f085.pdf
February 2010 tm FDS9431A_F085 P-Channel 2.5V Specified MOSFET Features General Description This P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 V using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 0.180 @ VGS = -2.5 V. technology. This very high density process has been especially tailored to minimize on-state resistan
fds9431a.pdf
September 1999 FDS9431A P-Channel 2.5V Specified MOSFET Features General Description -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 V This P-Channel 2.5V specified MOSFET is produced RDS(ON) = 0.180 @ VGS = -2.5 V. using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on- Fast
Otros transistores... FDS8978 , 2SK3116B , FDS8984 , SDU07N65 , FDS8984F085 , SDU06N60 , FDS9400A , FDS9431A , AO4407A , FDS9926A , FDS9933BZ , FDS9934C , SDU05N04 , FDS9945 , FDS9953A , FDS9958 , FDS9958F085 .
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