FDS9431AF085 - параметры транзистора MOSFET, его аналоги, datasheet

FDS9431AF085 Datasheet (PDF)

6.1. Size:75K fairchild semi
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September 1999FDS9431AP-Channel 2.5V Specified MOSFETFeaturesGeneral DescriptionThis P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 Vusing Fairchild's proprietary, high cell density, DMOSRDS(ON) = 0.180 @ VGS = -2.5 V.technology. This very high density process has beenespecially tailored to minimize on-state resistance and

6.2. Size:358K fairchild semi
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February 2010tmFDS9431A_F085P-Channel 2.5V Specified MOSFETFeaturesGeneral DescriptionThis P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 Vusing Fairchild's proprietary, high cell density, DMOSRDS(ON) = 0.180 @ VGS = -2.5 V.technology. This very high density process has beenespecially tailored to minimize on-state resistan

6.3. Size:176K onsemi
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September 1999FDS9431AP-Channel 2.5V Specified MOSFETFeaturesGeneral Description -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 VThis P-Channel 2.5V specified MOSFET is produced RDS(ON) = 0.180 @ VGS = -2.5 V.using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on- Fast

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