FDS9431AF085 Datasheet and Replacement
Type Designator: FDS9431AF085
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 6 nC
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SO-8
FDS9431AF085 substitution
FDS9431AF085 Datasheet (PDF)
fds9431a.pdf

September 1999FDS9431AP-Channel 2.5V Specified MOSFETFeaturesGeneral DescriptionThis P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 Vusing Fairchild's proprietary, high cell density, DMOSRDS(ON) = 0.180 @ VGS = -2.5 V.technology. This very high density process has beenespecially tailored to minimize on-state resistance and
fds9431a f085.pdf

February 2010tmFDS9431A_F085P-Channel 2.5V Specified MOSFETFeaturesGeneral DescriptionThis P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 Vusing Fairchild's proprietary, high cell density, DMOSRDS(ON) = 0.180 @ VGS = -2.5 V.technology. This very high density process has beenespecially tailored to minimize on-state resistan
fds9431a.pdf

September 1999FDS9431AP-Channel 2.5V Specified MOSFETFeaturesGeneral Description -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 VThis P-Channel 2.5V specified MOSFET is produced RDS(ON) = 0.180 @ VGS = -2.5 V.using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on- Fast
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Keywords - FDS9431AF085 MOSFET datasheet
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History: G1601 | 2302



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