HTJ500N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HTJ500N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.04 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.5 nS
Cossⓘ - Capacitancia de salida: 52 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SOT23
HTJ500N03 Datasheet (PDF)
htj500n03.pdf

HTJ500N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level43RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness60RDS(on),typ VGS=2.5V m 100% UIS Tested, 100% Rg Tested3.5 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialS
htj500p03.pdf

HTJ500P03 P-130V P-Ch Power MOSFET-30 VVDSFeature42RDS(on),typ VGS=10V m High Speed Power Switching, Logic Level66RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness-4.5 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorSOT-23DrainDS GateGPart Number Packa
Otros transistores... HTJ200N02 , HTJ270N03 , HTJ300N02 , HTJ350N03 , HTJ440P02 , HTJ440P02E , HTJ440P03 , HTJ450N02 , IRF830 , HTJ500P03 , HTJ600N06 , HTJ650P02 , HTJ850P03 , HTL140N02 , HTM035N03 , HTM040N03 , HTM040N03P .



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