All MOSFET. HTJ500N03 Datasheet

 

HTJ500N03 Datasheet and Replacement


   Type Designator: HTJ500N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.04 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23
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HTJ500N03 Datasheet (PDF)

 ..1. Size:915K  cn hunteck
 htj500n03.pdf pdf_icon

HTJ500N03

HTJ500N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level43RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness60RDS(on),typ VGS=2.5V m 100% UIS Tested, 100% Rg Tested3.5 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialS

 8.1. Size:478K  cn hunteck
 htj500p03.pdf pdf_icon

HTJ500N03

HTJ500P03 P-130V P-Ch Power MOSFET-30 VVDSFeature42RDS(on),typ VGS=10V m High Speed Power Switching, Logic Level66RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness-4.5 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorSOT-23DrainDS GateGPart Number Packa

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History: WMM11N80M3 | RFP2N10L | IRFI7536G | AM2314NE | FDMS9620S

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