FDS9934C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

March 2006FDS9934CComplementary FeaturesThese dual N- and P-Channel enhancement mode Q1: 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 Vpower field effect transistors are produced usingRDS(ON) = 43 m @ VGS = 2.5 V.Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimizeon-state ressitance and yet maintain superior switchingperf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

March 2008FDS9933BZtmDual P-Channel 2.5V Specified PowerTrench MOSFET -20V, -4.9A, 46mFeatures General Description Max rDS(on) = 46m at VGS = -4.5V, ID = -4.9A These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 69m at VGS = -2.5V, ID = -4.0Athat has been especially tailored to minimize

September 2006FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5 A, 20 V, RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 90 m @ VGS = 2.5 V process. It has been optimized for power management applications with a wide range of ga

November 1998FDS9933ADual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced -3.8 A, -20 V. RDS(on) = 0.075 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrenchRDS(on) = 0.105 @ VGS = -2.5 V.process that has been especially tailored to minimize theon-state resistance and yet ma

FDS9933Awww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vie