All MOSFET. FDS9934C Datasheet

 

FDS9934C MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDS9934C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.2 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SO-8

 FDS9934C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS9934C Datasheet (PDF)

 ..1. Size:162K  fairchild semi
fds9934c.pdf

FDS9934C
FDS9934C

March 2006FDS9934CComplementary FeaturesThese dual N- and P-Channel enhancement mode Q1: 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 Vpower field effect transistors are produced usingRDS(ON) = 43 m @ VGS = 2.5 V.Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimizeon-state ressitance and yet maintain superior switchingperf

 ..2. Size:272K  onsemi
fds9934c.pdf

FDS9934C
FDS9934C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:292K  fairchild semi
fds9933bz.pdf

FDS9934C
FDS9934C

March 2008FDS9933BZtmDual P-Channel 2.5V Specified PowerTrench MOSFET -20V, -4.9A, 46mFeatures General Description Max rDS(on) = 46m at VGS = -4.5V, ID = -4.9A These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 69m at VGS = -2.5V, ID = -4.0Athat has been especially tailored to minimize

 8.2. Size:367K  fairchild semi
fds9933.pdf

FDS9934C
FDS9934C

September 2006FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5 A, 20 V, RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 90 m @ VGS = 2.5 V process. It has been optimized for power management applications with a wide range of ga

 8.3. Size:63K  fairchild semi
fds9933a.pdf

FDS9934C
FDS9934C

November 1998FDS9933ADual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced -3.8 A, -20 V. RDS(on) = 0.075 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrenchRDS(on) = 0.105 @ VGS = -2.5 V.process that has been especially tailored to minimize theon-state resistance and yet ma

 8.4. Size:1522K  cn vbsemi
fds9933a.pdf

FDS9934C
FDS9934C

FDS9933Awww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vie

Datasheet: SDU07N65 , FDS8984F085 , SDU06N60 , FDS9400A , FDS9431A , FDS9431AF085 , FDS9926A , FDS9933BZ , MDF11N65B , SDU05N04 , FDS9945 , FDS9953A , FDS9958 , FDS9958F085 , FDSS2407 , FDT3612 , SDU04N65 .

History: FDS8949F085 | FDS6685

 

 
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