FDS9934C - описание и поиск аналогов

March 2006 FDS9934C Complementary Features These dual N- and P-Channel enhancement mode Q1 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V power field effect transistors are produced using RDS(ON) = 43 m @ VGS = 2.5 V. Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching perf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

March 2008 FDS9933BZ tm Dual P-Channel 2.5V Specified PowerTrench MOSFET -20V, -4.9A, 46m Features General Description Max rDS(on) = 46m at VGS = -4.5V, ID = -4.9A These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 69m at VGS = -2.5V, ID = -4.0A that has been especially tailored to minimize

September 2006 FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5 A, 20 V, RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 90 m @ VGS = 2.5 V process. It has been optimized for power management applications with a wide range of ga

November 1998 FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced -3.8 A, -20 V. RDS(on) = 0.075 @ VGS = -4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(on) = 0.105 @ VGS = -2.5 V. process that has been especially tailored to minimize the on-state resistance and yet ma

FDS9933A www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vie