HTM040N03 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HTM040N03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 21 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 378 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: DFN3X3

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HTM040N03 datasheet

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HTM040N03

HTM040N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 3.2 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 32 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DFN3x3 DC/DC in Telecoms and Inductrial Gate Src Part Number Pa

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HTM040N03

HTM040N03P P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 3.5 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 4.5 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 71 A ID Lead Free Application Hard Switching and High Speed Circuit Drain DFN3.3x3.3 DC/DC in Telecoms and Inductrial Gate Src Part Number P

Otros transistores... HTJ450N02, HTJ500N03, HTJ500P03, HTJ600N06, HTJ650P02, HTJ850P03, HTL140N02, HTM035N03, IRF1405, HTM040N03P, HTM058N03P, HTM060N03, HTM063P02, HTM095P02, HTM105P03P, HTM120N03, HTM120N03P