HTM040N03 Datasheet. Specs and Replacement

Type Designator: HTM040N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 378 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: DFN3X3

HTM040N03 substitution

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HTM040N03 datasheet

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HTM040N03

HTM040N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 3.2 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 32 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DFN3x3 DC/DC in Telecoms and Inductrial Gate Src Part Number Pa... See More ⇒

 0.1. Size:1236K  cn hunteck
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HTM040N03

HTM040N03P P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 3.5 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 4.5 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 71 A ID Lead Free Application Hard Switching and High Speed Circuit Drain DFN3.3x3.3 DC/DC in Telecoms and Inductrial Gate Src Part Number P... See More ⇒

Detailed specifications: HTJ450N02, HTJ500N03, HTJ500P03, HTJ600N06, HTJ650P02, HTJ850P03, HTL140N02, HTM035N03, IRF1405, HTM040N03P, HTM058N03P, HTM060N03, HTM063P02, HTM095P02, HTM105P03P, HTM120N03, HTM120N03P

Keywords - HTM040N03 MOSFET specs

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