HTN036N03P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HTN036N03P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 365 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm

Encapsulados: DFN5X6

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HTN036N03P datasheet

 ..1. Size:1040K  cn hunteck
 htn036n03p.pdf pdf_icon

HTN036N03P

HTN036N03P P-1 30V N-Ch Power MOSFET 30 V Feature VDS 3.6 Optimized for high speed switching, Logic Level RDS(on),max VGS=10V mW 5.4 RDS(on),max VGS=4.5V mW Enhanced Body diode dv/dt capability 70 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switchi

 8.1. Size:573K  cn hunteck
 htn036p03.pdf pdf_icon

HTN036N03P

HTN036P03 P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 3 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 4.6 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -80 A ID (Sillicon Limited) Lead Free, Halogen Free Application Drain Hard Switching and High Speed Circuit DFN5x6 DC/DC in Telecoms and Indu

 9.1. Size:1310K  cn hunteck
 htn035n04p.pdf pdf_icon

HTN036N03P

HTN035N04P P-1 40V N-Ch Power MOSFET 40 V Feature VDS 3.2 Optimized for high speed switching RDS(on),typ VGS=10V mW 7.4 RDS(on),typ VGS=6V mW Enhanced Body diode dv/dt capability 95 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Swi

 9.2. Size:914K  cn hunteck
 htn030n03.pdf pdf_icon

HTN036N03P

HTN030N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 2.5 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 75 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial DFN5x6 Gate Src Part Number Pa

MOSTRAR MÁS

Otros transistores... HTN019N03P, HTN020N03, HTN020N04P, HTN021N03, HTN027N03P, HTN027P02, HTN030N03, HTN035N04P, IRF3205, HTN036P03, HTN070A03, HTO350N03, HTO500P03, HTP2K1P10, HTS050N03, HTS060N03, HTS075P03