HTN036N03P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HTN036N03P
   Código: TN036N03P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 50 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 70 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 42 nC
   Tiempo de subida (tr): 20 nS
   Conductancia de drenaje-sustrato (Cd): 365 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0036 Ohm
   Paquete / Cubierta: DFN5X6

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HTN036N03P Datasheet (PDF)

..1. Size:1040K cn hunteck
htn036n03p.pdf

HTN036N03P P-130V N-Ch Power MOSFET30 VFeature VDS3.6 Optimized for high speed switching, Logic Level RDS(on),max VGS=10V mW5.4RDS(on),max VGS=4.5V mW Enhanced Body diode dv/dt capability70 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switchi

8.1. Size:573K cn hunteck
htn036p03.pdf

HTN036P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level3RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness4.6RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-80 AID (Sillicon Limited) Lead Free, Halogen FreeApplicationDrain Hard Switching and High Speed CircuitDFN5x6 DC/DC in Telecoms and Indu

9.1. Size:1310K cn hunteck
htn035n04p.pdf

HTN035N04P P-140V N-Ch Power MOSFET40 VFeature VDS3.2 Optimized for high speed switching RDS(on),typ VGS=10V mW7.4RDS(on),typ VGS=6V mW Enhanced Body diode dv/dt capability95 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Swi

9.2. Size:914K cn hunteck
htn030n03.pdf

HTN030N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level2.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness75 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number Pa

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