All MOSFET. HTN036N03P Datasheet

 

HTN036N03P MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTN036N03P
   Marking Code: TN036N03P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 42 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 365 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: DFN5X6

 HTN036N03P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTN036N03P Datasheet (PDF)

 ..1. Size:1040K  cn hunteck
 htn036n03p.pdf

HTN036N03P HTN036N03P

HTN036N03P P-130V N-Ch Power MOSFET30 VFeature VDS3.6 Optimized for high speed switching, Logic Level RDS(on),max VGS=10V mW5.4RDS(on),max VGS=4.5V mW Enhanced Body diode dv/dt capability70 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switchi

 8.1. Size:573K  cn hunteck
 htn036p03.pdf

HTN036N03P HTN036N03P

HTN036P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level3RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness4.6RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-80 AID (Sillicon Limited) Lead Free, Halogen FreeApplicationDrain Hard Switching and High Speed CircuitDFN5x6 DC/DC in Telecoms and Indu

 9.1. Size:1310K  cn hunteck
 htn035n04p.pdf

HTN036N03P HTN036N03P

HTN035N04P P-140V N-Ch Power MOSFET40 VFeature VDS3.2 Optimized for high speed switching RDS(on),typ VGS=10V mW7.4RDS(on),typ VGS=6V mW Enhanced Body diode dv/dt capability95 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Swi

 9.2. Size:914K  cn hunteck
 htn030n03.pdf

HTN036N03P HTN036N03P

HTN030N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level2.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness75 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number Pa

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