SFP086N80CC2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SFP086N80CC2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 454 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm
   Paquete / Cubierta: TO-220

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SFP086N80CC2 Datasheet (PDF)

..1. Size:3988K cn scilicon
sfp086n80cc2 sfb083n80cc2.pdf

SFP086N80CC2, SFB083N80CC2 N-MOSFET 80V, 6.6m, 100AFeatures Product Summary Extremely low on-resistance RDS(on)VDS80V Excellent QgxRDS(on) product(FOM)RDS(on)6.6m Qualified according to JEDEC criteria ID 100A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested

9.1. Size:4748K cn scilicon
sfp085n75c2 sfb082n75c2.pdf

SFP085N75C2, SFB082N75C2 N-MOSFET 75V, 6.5m, 100AFeatures Product Summary Extremely low on-resistance RDS(on)VDS75V Excellent QgxRDS(on) product(FOM)RDS(on)6.5m Qualified according to JEDEC criteria ID 100A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested1

9.2. Size:2260K cn scilicon
sfp085n165c3 sfb082n165c3.pdf

SFP085N165C3, SFB082N165C3 N-MOSFET 165V, 7.5m, 120AFeatures Product Summary Extremely low on-resistance RDS(on)VDS165V Excellent QgxRDS(on) product(FOM)RDS(on)7.5m Qualified according to JEDEC criteria ID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Teste

9.3. Size:1182K cn scilicon
sfp085n68c2 sfb082n68c2.pdf

SFP085N68C2,SFB082N68C2N-MOSFET 68V, 7.1m, 81AFeatures Product Summary Extremely low on-resistance RDS(on)VDS68V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 7.1m Qualified according to JEDEC criteria ID81A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)SFP085

9.4. Size:8952K cn scilicon
sfp080n100ac2 sfb077n100ac2.pdf

SFP080N100AC2,SFB077N100AC2 N-MOSFET 100V, 6.5m, 110AFeatures Product SummaryLow On-ResistanceVDS100VFast SwitchingRDS(on) typ. 6.5m100% Avalanche TestedRepetitive Avalanche Allowed up to Tjmax ID110ALead-Free, RoHS Compliant100% DVDS TestedApplications Power management for inverter systems100% Avalanche TestedSynchronous rectificationSFP08

9.5. Size:5318K cn scilicon
sfp080n150c2 sfb077n150c2.pdf

SFP080N150C2, SFB077N150C2 N-MOSFET 150V, 6.0m, 140AFeatures Product SummaryVDS150V High Speed Power Switching Enhanced Body diode dv/dt capabilityRDS(on)6.0m Enhanced Avalanche RuggednessID 140AApplications100% DVDS Tested Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested100

9.6. Size:2393K cn scilicon
sfp085n80dc2 sfb082n80dc2.pdf

SFP085N80DC2,SFB082N80DC2 N-MOSFET 80V, 6.3m, 110AFeatures Product Summary Extremely low on-resistance RDS(on)VDS80V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 6.3m Qualified according to JEDEC criteria ID110A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)S

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