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SFP086N80CC2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SFP086N80CC2
   Маркировка: 086N80CC2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 56.3 nC
   trⓘ - Время нарастания: 73 ns
   Cossⓘ - Выходная емкость: 454 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0086 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для SFP086N80CC2

 

 

SFP086N80CC2 Datasheet (PDF)

 ..1. Size:3988K  cn scilicon
sfp086n80cc2 sfb083n80cc2.pdf

SFP086N80CC2 SFP086N80CC2

SFP086N80CC2, SFB083N80CC2 N-MOSFET 80V, 6.6m, 100AFeatures Product Summary Extremely low on-resistance RDS(on)VDS80V Excellent QgxRDS(on) product(FOM)RDS(on)6.6m Qualified according to JEDEC criteria ID 100A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested

 9.1. Size:4748K  cn scilicon
sfp085n75c2 sfb082n75c2.pdf

SFP086N80CC2 SFP086N80CC2

SFP085N75C2, SFB082N75C2 N-MOSFET 75V, 6.5m, 100AFeatures Product Summary Extremely low on-resistance RDS(on)VDS75V Excellent QgxRDS(on) product(FOM)RDS(on)6.5m Qualified according to JEDEC criteria ID 100A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested1

 9.2. Size:2260K  cn scilicon
sfp085n165c3 sfb082n165c3.pdf

SFP086N80CC2 SFP086N80CC2

SFP085N165C3, SFB082N165C3 N-MOSFET 165V, 7.5m, 120AFeatures Product Summary Extremely low on-resistance RDS(on)VDS165V Excellent QgxRDS(on) product(FOM)RDS(on)7.5m Qualified according to JEDEC criteria ID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Teste

 9.3. Size:1182K  cn scilicon
sfp085n68c2 sfb082n68c2.pdf

SFP086N80CC2 SFP086N80CC2

SFP085N68C2,SFB082N68C2N-MOSFET 68V, 7.1m, 81AFeatures Product Summary Extremely low on-resistance RDS(on)VDS68V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 7.1m Qualified according to JEDEC criteria ID81A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)SFP085

 9.4. Size:8952K  cn scilicon
sfp080n100ac2 sfb077n100ac2.pdf

SFP086N80CC2 SFP086N80CC2

SFP080N100AC2,SFB077N100AC2 N-MOSFET 100V, 6.5m, 110AFeatures Product SummaryLow On-ResistanceVDS100VFast SwitchingRDS(on) typ. 6.5m100% Avalanche TestedRepetitive Avalanche Allowed up to Tjmax ID110ALead-Free, RoHS Compliant100% DVDS TestedApplications Power management for inverter systems100% Avalanche TestedSynchronous rectificationSFP08

 9.5. Size:5318K  cn scilicon
sfp080n150c2 sfb077n150c2.pdf

SFP086N80CC2 SFP086N80CC2

SFP080N150C2, SFB077N150C2 N-MOSFET 150V, 6.0m, 140AFeatures Product SummaryVDS150V High Speed Power Switching Enhanced Body diode dv/dt capabilityRDS(on)6.0m Enhanced Avalanche RuggednessID 140AApplications100% DVDS Tested Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested100

 9.6. Size:2393K  cn scilicon
sfp085n80dc2 sfb082n80dc2.pdf

SFP086N80CC2 SFP086N80CC2

SFP085N80DC2,SFB082N80DC2 N-MOSFET 80V, 6.3m, 110AFeatures Product Summary Extremely low on-resistance RDS(on)VDS80V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 6.3m Qualified according to JEDEC criteria ID110A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)S

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