SFP086N80CC2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFP086N80CC2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 454 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
Package: TO-220
SFP086N80CC2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFP086N80CC2 Datasheet (PDF)
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