JCS10N80GDC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JCS10N80GDC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 416 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 34.8 nS
Cossⓘ - Capacitancia de salida: 235.2 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: TO3PB
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JCS10N80GDC Datasheet (PDF)
jcs10n80fc jcs10n80gdc.pdf

N RN-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS RdsonVgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch
jcs10n80f.pdf

N RN-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS RdsonVgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch
jcs10n65f.pdf

R JCS10N65FC JCS10N65FC Package MAIN CHARACTERISTICS ID 10 A 650 V VDSS 1.0 Rdson-max@Vgs=10V Qg-Typ 54 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES
jcs10n60f jcs10n60c.pdf

R JCS10N60C JCS10N60C MAIN CHARACTERISTICS Package ID 10 A VDSS 600 V Rdson-max 0.85 Vgs=10V Qg-Typ 51.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES
Otros transistores... JCS10N65C , JCS10N65F , JCS10N65S , JCS10N70B , JCS10N70C , JCS10N70F , JCS10N70S , JCS10N80FC , 20N60 , JCS110N07I , JCS11N90ABT , JCS11N90WT , JCS12N65BEI , JCS12N65CEI , JCS12N65FEI , JCS12N65SEI , JCS13AN50BC .
History: IAUC120N04S6L008 | JCS12N65CEI | FTP02N65 | AOTL66914 | AP4963GEM | FDI036N10A
History: IAUC120N04S6L008 | JCS12N65CEI | FTP02N65 | AOTL66914 | AP4963GEM | FDI036N10A



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