JCS10N80GDC MOSFET Datasheet: N-Ch, 800V, 10A. Full specification with pinout and replacement list

JCS10N80GDC Specs and Replacement

Type Designator: JCS10N80GDC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 416 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34.8 nS

Cossⓘ - Output Capacitance: 235.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO3PB

JCS10N80GDC substitution

- MOSFET ⓘ Cross-Reference Search

JCS10N80GDC datasheet

..1. Size:953K jilin sino
jcs10n80fc jcs10n80gdc.pdf pdf_icon

N R N-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS Rdson Vgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch... See More ⇒

6.1. Size:1202K jilin sino
jcs10n80f.pdf pdf_icon

8.1. Size:830K jilin sino
jcs10n65f.pdf pdf_icon

... See More ⇒

8.2. Size:1369K jilin sino
jcs10n60f jcs10n60c.pdf pdf_icon

R JCS10N60C JCS10N60C MAIN CHARACTERISTICS Package ID 10 A VDSS 600 V Rdson-max 0.85 Vgs=10V Qg-Typ 51.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES ... See More ⇒