FDY102PZ Todos los transistores

 

FDY102PZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDY102PZ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.83 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: SOT523F
     - Selección de transistores por parámetros

 

FDY102PZ Datasheet (PDF)

 ..1. Size:203K  fairchild semi
fdy102pz.pdf pdf_icon

FDY102PZ

February 2010FDY102PZtmSingle P-Channel (1.5 V) Specified PowerTrench MOSFET20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 AThis Single P-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 Aoptimize the rDS(on)@

 9.1. Size:177K  fairchild semi
fdy100pz.pdf pdf_icon

FDY102PZ

January 2006 FDY100PZ Single P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed 350 mA, 20 V RDS(ON) = 1.2 @ VGS = 4.5 V using Fairchild Semiconductors advanced Power RDS(ON) = 1.6 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. A

 9.2. Size:127K  fairchild semi
fdy101pz.pdf pdf_icon

FDY102PZ

January 2006FDY101PZ Single P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed 150 mA, 20 V RDS(ON) = 8 @ VGS = 4.5 V using Fairchild Semiconductors advanced PowerRDS(ON) = 12 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD pro

 9.3. Size:267K  fairchild semi
fdy1002pz.pdf pdf_icon

FDY102PZ

October 2008FDY1002PZDual P-Channel (1.5 V) Specified PowerTrench MOSFET20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 AThis Dual P-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 Aoptimize the rDS(on)@VG

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History: PML260SN | STP8NS25FP | AP4407GS-HF | KP746B1 | TMPF11N50SG | IPW65R280E6 | AOT482L

 

 
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