FDY102PZ MOSFET PDF: P-Ch, 20V, 0.83A. Full specification with pinout and replacement list

FDY102PZ PDF Specs and Replacement

   Type Designator: FDY102PZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.83 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   Qg ⓘ - Total Gate Charge: 2.2 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: SOT523F

FDY102PZ substitution

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FDY102PZ PDF Specs

..1. Size:203K fairchild semi
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February 2010 FDY102PZ tm Single P-Channel ( 1.5 V) Specified PowerTrench MOSFET 20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 A optimize the rDS(on)@... See More ⇒

9.1. Size:177K fairchild semi
fdy100pz.pdf pdf_icon

January 2006 FDY100PZ Single P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed 350 mA, 20 V RDS(ON) = 1.2 @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 1.6 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. A... See More ⇒

9.2. Size:127K fairchild semi
fdy101pz.pdf pdf_icon

January 2006 FDY101PZ Single P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed 150 mA, 20 V RDS(ON) = 8 @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 12 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD pro... See More ⇒

9.3. Size:267K fairchild semi
fdy1002pz.pdf pdf_icon

October 2008 FDY1002PZ Dual P-Channel ( 1.5 V) Specified PowerTrench MOSFET 20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 A This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 A optimize the rDS(on)@VG... See More ⇒