Справочник MOSFET. FDY102PZ

 

FDY102PZ Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDY102PZ
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.83 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
   Тип корпуса: SOT523F
     - подбор MOSFET транзистора по параметрам

 

FDY102PZ Datasheet (PDF)

 ..1. Size:203K  fairchild semi
fdy102pz.pdfpdf_icon

FDY102PZ

February 2010FDY102PZtmSingle P-Channel (1.5 V) Specified PowerTrench MOSFET20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 AThis Single P-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 Aoptimize the rDS(on)@

 9.1. Size:177K  fairchild semi
fdy100pz.pdfpdf_icon

FDY102PZ

January 2006 FDY100PZ Single P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed 350 mA, 20 V RDS(ON) = 1.2 @ VGS = 4.5 V using Fairchild Semiconductors advanced Power RDS(ON) = 1.6 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. A

 9.2. Size:127K  fairchild semi
fdy101pz.pdfpdf_icon

FDY102PZ

January 2006FDY101PZ Single P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed 150 mA, 20 V RDS(ON) = 8 @ VGS = 4.5 V using Fairchild Semiconductors advanced PowerRDS(ON) = 12 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD pro

 9.3. Size:267K  fairchild semi
fdy1002pz.pdfpdf_icon

FDY102PZ

October 2008FDY1002PZDual P-Channel (1.5 V) Specified PowerTrench MOSFET20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 AThis Dual P-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 Aoptimize the rDS(on)@VG

Другие MOSFET... FDT86244 , FDT86246 , FDU3N40 , SDT03N04 , FDV305N , FDY1002PZ , FDY100PZ , FDY101PZ , IRFP250N , FDY2000PZ , FDY3000NZ , FDY300NZ , FDY301NZ , FDY302NZ , FDY4000CZ , SDT02N02 , FDZ1905PZ .

History: IRFI840GLCPBF | STB10NK60ZT4 | NCEAP016N10LL | BUK455-100B | SI7413DN | FDG6320C | SSF65R420S2

 

 
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